s ubminiatur e p hotointerrupter MIR-3305-P description package dimensions the MIR-3305-P consists of a gallium arsenide in- frared emitting diode and a npn silicon phototran- sistor built in a black plastic housing. it is a refl- ective subminiature photointerrupter. features compact and thin MIR-3305-P : compact dip, long lead type optimum detecting distance : 0.8 - 1.0 mm wavelength : 940nm visible light cut-off type flat lead type absolute maximum ratings @ t a =25 o c parameter symbol minimum rating maximum rating unit continuous forward current i f 50 ma input reverse voltage v r 5v power dissipation p ad 75 mw v (br)ceo 30 v output v (br)eco 5v p c 75 mw total power dissipation p tot 100 mw operating temperature range t opr -25 o c to + 85 o c storage temperature range t stg -40 o c to + 100 o c 12/10/2002 lead soldering temperature (within 5 sec, minimum 1.6mm from body) at 260 o c collector-emitter breakdown voltage emitter-collector breakdown voltag e collector power dissipation unity opto technology co., ltd. unit: mm note : (1).tolerance:0.2mm (2). ( ) reference dimensions d a emitter anode top vie w b c ca thode collector
MIR-3305-P optical-electrical characteristics @ t a =25 o c min. typ. max. unit. test conditions input forward voltage - - 1.3 v i f =20ma reverse current - - 10 a v r =5v output collector dark current - - 0.2 a vce =10v b38 - 75 c 56 - 108 d 80 - 151 e 112 - 216 response time (rise) - 20 100 s ic=100 a, vce =2v response time (fall) - 20 100 s r l =1k ? *2 leak current - - 0.1 a vce =5v *1 the condition and arrangement of the reflective object are shown as following . *2 without reflective object. test condition and arrangement for collector current typical optical-electrical characteristic curves 12/10/2002 parameter symbol v f i r iceo t f i leak i f =4ma,vce=5v a transfer characteristic s *1 collector current ic t r unity opto technology co., ltd. ambient temperature t a ( o c) fig.1 forward current vs . ambient tem p erature forward current i f (ma) 0 10 20 30 40 50 60 -25 0 25 50 75 100 forward current i f (ma) 0 20 40 60 80 100 120 -25 0 25 50 75 100 ambient temperature t a ( o c ) fig.2 power dissipation vs. ambient temperature power dissipation (mw) p tot p ad , p c collector current ic ( a) 0 100 200 300 400 500 600 0 5 10 15 20 vce=5v ta=25 o c forward current i f (ma) fig.4 collector current vs. forward current 0 10 20 30 40 50 0 0.5 1 1.5 forward voltage v f (v) fig.3 forward current vs forward voltage devic e al refletive surface 1 mm-thick glass
MIR-3305-P typical optical-electrical characteristic curves test circuit for response time 12/10/2002 unity opto technology co., ltd. 10% t s t r input output t d t f output r l input r d 90% vc c 0 50 100 150 200 250 300 350 024681012 collector current ic ( a) ta=25 o c i f =10ma 4ma 1ma collector-emitter voltage vce (v) fig.5 collector current vs. vce 0 20 40 60 80 100 120 -25 0 25 50 75 100 relative collector current (%) ambient temperature t a ( o c) fig.6 relative collector current vs . 0 25 50 75 100 collector dark current i ceo ambient temperature t a ( o c) fig.7 collector dark current vs. ambient temperature v ce =10v response time ( s) load resistance r t (k ? ) fig.8 response time vs. load resistance 10 -6 10 -7 10 -8 10 -9 10 -10 relative collector current (%) 0 20 40 60 80 100 700 800 900 1000 1100 1200 relative sensitivity (%) wavelength (nm) fig.9 spectral sensitivity (detecting side) ta=2 5 o c 0 20 40 60 80 100 120 012345678910 i f =4ma v ce =5v t a =25 o c distance (mm) fig.10 relative collector current vs. distance b etween mir-3301 and card 0.1 1 10 100 0.01 0.1 1 10 v ce =2v i c =100a t a =25 o c t r t r t d t s
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